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HM5N60I

600V N-Channel MOSFET

HM5N60I Features

* 4.5A, 600V, RDS(on) = 2.50Ω @VGS = 10 V

* Low gate charge ( typical 16nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability {D

* TO-252 TO-251 ◀▲ {G

* {S Absolute Maximum Ratings TC = 25°Cunle

HM5N60I General Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices ar.

HM5N60I Datasheet (448.63 KB)

Preview of HM5N60I PDF

Datasheet Details

Part number:

HM5N60I

Manufacturer:

H&M Semiconductor

File Size:

448.63 KB

Description:

600v n-channel mosfet.

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HM5N60I 600V N-Channel MOSFET H&M Semiconductor

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