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HM6800 Dual N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Description

HM6800 Dual N-Channel Enhancement Mode Power MOSFET .
The HM6800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: HM6800
Manufacturer: H&M Semiconductor
File Size: 422.58 KB
Datasheet: HM6800-HMSemiconductor.pdf
Description: Dual N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 30V,ID = A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON)

Applications

* Load switch
* Power management SOT23-6L top view Package Marking And Ordering Information Device Marking Device Device Package 6800M HM6800 SOT-23-6L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol L

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HM6800 Dual N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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