HM6801 - Dual P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Datasheet Details

Part number	HM6801
Manufacturer	H&M Semiconductor
File Size	676.40 KB
Description	Dual P-Channel Enhancement Mode Power MOSFET
Datasheet	HM6801-HMSemiconductor.pdf

The HM6801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

VDS = -30V,ID = -2.5A RDS(ON) < 130mΩ @ VGS=-10V RDS(ON) < 180mΩ @ VGS=-4.5V DD GG SS Schematic diagram G1 1 S2 2 6 5 D1 S1.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package G2 3 4 D2 Marking and pin Assignment.

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Published: Nov 27, 2018 |