HM6801 Dual P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM6801 Dual P-Channel Enhancement Mode Power MOSFET .
The HM6801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: HM6801
Manufacturer: H&M Semiconductor
File Size: 676.40 KB
Datasheet: HM6801-HMSemiconductor.pdf
Description: Dual P-Channel Enhancement Mode Power MOSFET

Features

* VDS = -30V,ID = -2.5A RDS(ON) < 130mΩ @ VGS=-10V RDS(ON) < 180mΩ @ VGS=-4.5V DD GG SS Schematic diagram G1 1 S2 2 6 5 D1 S1
* High Power and current handing capability
* Lead free product is acquired
* Surface Mount Package G2 3 4 D2 Marking and pin Assignment Applic

HM6801 Distributors

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HM6801 Dual P-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM6801-like datasheet