HM6804 - Dual N-Channel MOSFET

H&M Semiconductor

Datasheet Details

The HM680 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

VDS = 20V,ID = A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package S S Schematic diagram G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 Marking and pin Assignment.

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Published: Apr 18, 2024 |