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HM6804 Dual N-Channel MOSFET

H&M Semiconductor

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Description

HM680 Dual N-Channel Enhancement Mode Power MOSFET .
The HM680 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: HM6804
Manufacturer: H&M Semiconductor
File Size: 612.48 KB
Datasheet: HM6804-HMSemiconductor.pdf
Description: Dual N-Channel MOSFET

Features

* VDS = 20V,ID = A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V
* High Power and current handing capability
* Lead free product is acquired

Applications

* Load switch
* Power management SOT23-6L top view Package Marking And Ordering Information Device Marking Device Device Package 6800M HM680 SOT-23-6L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol L

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HM6804 Dual N-Channel MOSFET H&M Semiconductor

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