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HM7N65F - 650V N-Channel MOSFET

Product Overview

H&M Semiconductor

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HM7N65F 650V N-Channel MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM7N65F

Datasheet Details

Part number	HM7N65F
Manufacturer	H&M Semiconductor
File Size	560.54 KB
Description	650V N-Channel MOSFET
Datasheet	HM7N65F Datasheet
Note	This datasheet PDF includes multiple part numbers: HM7N65F, HM7N65. Please refer to the document for exact specifications by model.
Additional preview pages of the HM7N65F datasheet.

Product details

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

Features

7.0A, 650V, RDS(on) = 1.26Ω @VGS = 10 V.
Low gate charge ( typical 29nC).
High ruggedness.
Fast wsitching.
100% avalanche tested.
Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
◀▲ {G.
{S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Ga.

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Published: Jun 21, 2025 |