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HM7N80F - 800V N-Channel MOSFET

Product Overview

H&M Semiconductor

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HM7N80F 800V N-Channel MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM7N80F

Datasheet Details

Part number	HM7N80F
Manufacturer	H&M Semiconductor
File Size	304.82 KB
Description	800V N-Channel MOSFET
Datasheet	HM7N80F Datasheet
Note	This datasheet PDF includes multiple part numbers: HM7N80F, HM7N80. Please refer to the document for exact specifications by model.
Additional preview pages of the HM7N80F datasheet.

Product details

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

Features

7.0A, 800V, RDS(on) = 1.90Ω @VGS = 10 V.
Low gate charge ( typical 27nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability GDS TO-220 GD S TO-220F {.
◀▲ {.
{ Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-.

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Published: Jul 15, 2025 |