HM9926B

Dual N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number:

HM9926B

Manufacturer:

H&M Semiconductor

File Size:

485.03 KB

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Description:

Dual n-channel enhancement mode power mosfet.
HM9926B Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM9926B uses advanced trench t.
The HM9926B uses advanced trench technology and design to provide excellent RDS(ON) with low gate ch.

✔ HM9926B Features

VDS =20V,ID =5A RDS(ON) < 50mΩ @ VGS=4.5V RDS(ON) < 63mΩ @ VGS=2.5V Schematic diagram
High density cell design for ultra low Rdson
Fully characterized Avalanche v

✔ HM9926B Application

GENERAL FEATURES
VDS =20V,ID =5A RDS(ON) < 50mΩ @ VGS=4.5V RDS(ON) < 63mΩ @ VGS=2.5V Schematic diagram

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HM9926B Dual N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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