HM9926B - Dual N-Channel Enhancement Mode Power MOSFET
HM9926B Features
* VDS =20V,ID =5A RDS(ON) < 50mΩ @ VGS=4.5V RDS(ON) < 63mΩ @ VGS=2.5V Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current Application
* Power switching application
* Hard Switched and High Frequency Circuits
