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HM9926 - Dual N-Channel Enhancement Mode Power MOSFET

HM9926 Description

HM9926 Dual N-Channel Enhancement Mode Power MOSFET .
The HM9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

HM9926 Features

* VDS =20V,ID =6A RDS(ON) < 30mΩ @ VGS=4.5V RDS(ON) < 40mΩ @ VGS=2.5V Schematic diagram
* High density cell design for ultra low Rdson

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Datasheet Details

Part number
HM9926
Manufacturer
H&M Semiconductor
File Size
384.20 KB
Datasheet
HM9926-HMSemiconductor.pdf
Description
Dual N-Channel Enhancement Mode Power MOSFET

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Dual N-Channel Enhancement Mode Power MOSFET H&M Semiconductor
H&M Semiconductor HM9926-like datasheet

HM9926 Stock/Price