HM9N50K - 500V N-Channel MOSFET

Name: HM9N50K
SKU: HM9N50K-1580507

H&M Semiconductor

Datasheet Details

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

9A, 500V, RDS(on) = 0.95Ω @VGS = 10 V.
Low gate charge ( typical 16nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability {D.
TO-252 TO-251 ◀▲ {G.
{S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Volt.

📁 HM9N50K Similar Datasheet

Other Datasheets by H&M Semiconductor

Published: Jun 22, 2025 |