HMS15N50F Datasheet - H&M Semiconductor

HMS15N50F 500V N-Channel MOSFET

This Power MOSFET is producFeeadtuurseisng H&M Semi’s Advanced Super-Junction This advanced technology theacsh *nb7Lo.oe6wlAeo,gng5ay0tee0. Vsch,paRerDgcSe(oi(na)ttylylppy. i=cat0al .5i2lΩo5n@rCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching perform.

HMS15N50F Features

* -15A, 500V, RDS(on) typ.= 0.28Ω@VGS = 10 V - Low gate charge ( typical 70nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability HMS15N50F HMS15N50 HMS15N50T HMS15N50A D TO-220F GDS GDS TO-220 GDS TO-247 GDS TO-3P G S Absolute Maximum Ratings TC = 25°C

HMS15N50F-HMSemiconductor.pdf