HMS8N65K Features
* New technology for high voltage device
* Low on-resistance and low conduction losses
* Small package
* Ultra Low Gate Charge cause lower driving requirements
* 100% Avalanche Tested
* ROHS compliant VDS 650 V RDS(ON) MAX 540 mΩ ID 8 A Application
* Power factor corr
Datasheet Details
HMS8N65K, HMS8N65I
H&M Semiconductor
737.33 KB
N-channel super junction power mosfet.
This datasheet PDF includes multiple part numbers: HMS8N65K, HMS8N65I.
Please refer to the document for exact specifications by model.
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