Part number: HM55N03D
Manufacturer: H&M semi
File Size: 952.64KB
Download: 📄 Datasheet
Description: N-Channel Enhancement Mode Power MOSFET
* VDS =30V,ID =55A RDS(ON) <4.0mΩ @ VGS=10V (Typ:3.0mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
General Features
* VDS =30V,ID =55A RDS(ON) <4.0mΩ @ VGS=10V (Typ:3.0mΩ)
* High density cell design for ultra l.
The HM100N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =30V,ID =55A RDS(ON) <4.0mΩ @ VGS=10V (Typ:3.0mΩ)
* High dens.
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