Part number:
H4N60F
Manufacturer:
HAOHAI
File Size:
501.22 KB
Description:
N-channel mosfet.
Datasheet Details
H4N60F Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 15nC(Typ.) Extended Safe Operating Area Lower RDS(ON): 2.0Ω(Typ.) @ VGS=10V 100% Avalanche Tested Package: TO
Datasheet Details
H4N60F
HAOHAI
501.22 KB
N-channel mosfet.
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