H4N60P - N-Channel MOSFET

HAOHAI

Datasheet Details

　Originative New Design 　Superior Avalanche Rugged Technology 　Robust Gate Oxide Technology 　Very Low Intrinsic Capacitances 　Excellent Switching Characteristics 　Unrivalled Gate Charge: 15nC(Typ. ) 　Extended Safe Operating Area 　Lower RDS(ON): 2.0Ω(Typ. ) @ VGS=10V 　100% Avalanche Tested 　Package: TO-220AB & TO-220F ID=4A BVDSS=600V RDS(on)=2.0Ω.
　、、、、、RoHS.
　、LCD、LED、、UPS、　、、、、、、　、、.
　TO-220P TO-220AB（）　TO-220F TO-220FP（） 4N60 Series Pin Assignment 3-Lead Plastic TO-220.

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