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H4N60P Datasheet - HAOHAI

H4N60P N-Channel MOSFET

H4N60P Features

* 　Originative New Design 　Superior Avalanche Rugged Technology 　Robust Gate Oxide Technology 　Very Low Intrinsic Capacitances 　Excellent Switching Characteristics 　Unrivalled Gate Charge: 15nC(Typ.) 　Extended Safe Operating Area 　Lower RDS(ON): 2.0Ω(Typ.) @ VGS=10V 　100% Avalanche Tested 　Package: TO

H4N60P Datasheet (501.22 KB)

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Datasheet Details

Part number:

H4N60P

Manufacturer:

HAOHAI

File Size:

501.22 KB

Description:

N-channel mosfet.

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H4N60P N-Channel MOSFET HAOHAI

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