H07N60E, H07N60E-HI Datasheet - HI-SINCERITY

H07N60E - PNP EPITAXIAL PLANAR TRANSISTOR

H07N60E Features

* High hFE and Excellent Linearity: 200 Typ. hFE(VCE=6.0,IC=1.0mA) Absolute Maximum Ratings

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum

* Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 250 mW

* Maximum

Datasheet Details

H07N60E, H07N60E-HI

HI-SINCERITY

23.64 KB

Pnp epitaxial planar transistor.

This datasheet PDF includes multiple part numbers: H07N60E, H07N60E-HI.
Please refer to the document for exact specifications by model.

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