H07N60F, H07N60E-HI PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY

Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.:HSP200204 Issued Date : 1998.01.06 Revised Date : 2002.03.26 Page No.: 1/3 HSA733SP PNP EPITAXIAL PL.
The HSA733 is designed for use in driver stage of AF amplifier. High hFE and Excellent Linearity: 200 Typ.

📥 Download Datasheet

H07N60F Datasheet Preview — This datasheet PDF includes multiple part numbers: H07N60F, H07N60E-HI. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: H07N60F, H07N60E-HI
Manufacturer: HI-SINCERITY
File Size: 23.64 KB
Datasheet: H07N60E-HI-SINCERITY.pdf
Description: PNP EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: H07N60F, H07N60E-HI.
Please refer to the document for exact specifications by model.

Features

* High hFE and Excellent Linearity: 200 Typ. hFE(VCE=6.0,IC=1.0mA) Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 250 mW
* Maximum

H07N60F Distributors

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H07N60E-HI PNP EPITAXIAL PLANAR TRANSISTOR HI-SINCERITY

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