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H07N60F Datasheet - HI-SINCERITY

PNP EPITAXIAL PLANAR TRANSISTOR

H07N60F Features

* High hFE and Excellent Linearity: 200 Typ. hFE(VCE=6.0,IC=1.0mA) Absolute Maximum Ratings

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum

* Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 250 mW

* Maximum

H07N60F Datasheet (23.64 KB)

Preview of H07N60F PDF

Datasheet Details

Part number:

H07N60F

Manufacturer:

HI-SINCERITY

File Size:

23.64 KB

Description:

Pnp epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :HSP200204 Issued Date : 1998.01.06 Revised Date : 2002.03.26 Page No. : 1/3 HSA733SP PNP EPITAXIAL PL.

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H07N60F PNP EPITAXIAL PLANAR TRANSISTOR HI-SINCERITY

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