HY3007B Datasheet, mosfet equivalent, HOOYI

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Part number: HY3007B

Manufacturer: HOOYI

File Size: 809.28KB

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Description: N-Channel Enhancement Mode MOSFET

Datasheet Preview: HY3007B 📥 Download PDF (809.28KB)

HY3007B Features and benefits


* 68V / 120 A RDS(ON)= 5.0 m (typ.) @ V =10V GS
* Avalanche Rated
* Reliable and Rugged
* Lead Free and Green Devices Available (RoHS Complia.

HY3007B Application


* Power Management for Inverter Systems. DS G TO-3PS-3L DS G TO-3PM-3S Ordering and Marking Information N-Channe.

HY3007B Description

DS G TO-220FB-3L DS G TO-220FB-3S G DS TO-263-2L Applications
* Power Management for Inverter Systems. DS G TO-3PS-3L DS G TO-3PM-3S Ordering and Marking Information N-Channel MOSFET P HY3007 XYMXXXXXX PS HY3007 XYMXXXXXX M HY3007 XYMXX.

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TAGS

HY3007B
N-Channel
Enhancement
Mode
MOSFET
HOOYI

📁 Related Datasheet

HY3007M - N-Channel Enhancement Mode MOSFET (HOOYI)
HY3007P/M/B/PS/PM Features • 68V / 120 A RDS(ON)= 5.0 m (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugged • Lead Free and Green .

HY3007P - N-Channel Enhancement Mode MOSFET (HOOYI)
HY3007P/M/B/PS/PM Features • 68V / 120 A RDS(ON)= 5.0 m (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugged • Lead Free and Green .

HY3007PM - N-Channel Enhancement Mode MOSFET (HOOYI)
HY3007P/M/B/PS/PM Features • 68V / 120 A RDS(ON)= 5.0 m (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugged • Lead Free and Green .

HY3007PS - N-Channel Enhancement Mode MOSFET (HOOYI)
HY3007P/M/B/PS/PM Features • 68V / 120 A RDS(ON)= 5.0 m (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugged • Lead Free and Green .

HY3003 - N-Channel MOSFET (HOOYI)
HY3003P/B N-Channel Enhancement Mode MOSFET Features • 30V/100A RDS(ON)= 3.5mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Exce.

HY3003B - N-Channel MOSFET (HOOYI)
HY3003P/B N-Channel Enhancement Mode MOSFET Features • 30V/100A RDS(ON)= 3.5mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Exce.

HY3003P - N-Channel MOSFET (HOOYI)
HY3003P/B N-Channel Enhancement Mode MOSFET Features • 30V/100A RDS(ON)= 3.5mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Exce.

HY3008B - N-Channel Enhancement Mode MOSFET (HOOYI)
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HY3008M - N-Channel Enhancement Mode MOSFET (HOOYI)
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HY3008P - N-Channel Enhancement Mode MOSFET (HOOYI)
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