Part number: HY3007M
Manufacturer: HOOYI
File Size: 809.28KB
Download: 📄 Datasheet
Description: N-Channel Enhancement Mode MOSFET
* 68V / 120 A
RDS(ON)=
5.0
m
(typ.)
@
V =10V GS
* Avalanche Rated
* Reliable and Rugged
* Lead Free and Green Devices Available
(RoHS Complia.
* Power Management for Inverter Systems.
DS G TO-3PS-3L
DS G TO-3PM-3S
Ordering and Marking Information
N-Channe.
DS G TO-220FB-3L
DS G TO-220FB-3S
G DS TO-263-2L
Applications
* Power Management for Inverter Systems.
DS G TO-3PS-3L
DS G TO-3PM-3S
Ordering and Marking Information
N-Channel MOSFET
P HY3007
XYMXXXXXX
PS HY3007
XYMXXXXXX
M HY3007
XYMXX.
Image gallery
TAGS
📁 Related Datasheet
HY3007B - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY3007P/M/B/PS/PM
Features
• 68V / 120 A
RDS(ON)=
5.0
m
(typ.)
@
V =10V GS
• Avalanche Rated
• Reliable and Rugged
• Lead Free and Green .
HY3007P - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY3007P/M/B/PS/PM
Features
• 68V / 120 A
RDS(ON)=
5.0
m
(typ.)
@
V =10V GS
• Avalanche Rated
• Reliable and Rugged
• Lead Free and Green .
HY3007PM - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY3007P/M/B/PS/PM
Features
• 68V / 120 A
RDS(ON)=
5.0
m
(typ.)
@
V =10V GS
• Avalanche Rated
• Reliable and Rugged
• Lead Free and Green .
HY3007PS - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY3007P/M/B/PS/PM
Features
• 68V / 120 A
RDS(ON)=
5.0
m
(typ.)
@
V =10V GS
• Avalanche Rated
• Reliable and Rugged
• Lead Free and Green .
HY3003 - N-Channel MOSFET
(HOOYI)
HY3003P/B
N-Channel Enhancement Mode MOSFET
Features
• 30V/100A
RDS(ON)= 3.5mΩ (typ.) @ VGS=10V
• 100% EAS Guaranteed • Super Low Gate Charge • Exce.
HY3003B - N-Channel MOSFET
(HOOYI)
HY3003P/B
N-Channel Enhancement Mode MOSFET
Features
• 30V/100A
RDS(ON)= 3.5mΩ (typ.) @ VGS=10V
• 100% EAS Guaranteed • Super Low Gate Charge • Exce.
HY3003P - N-Channel MOSFET
(HOOYI)
HY3003P/B
N-Channel Enhancement Mode MOSFET
Features
• 30V/100A
RDS(ON)= 3.5mΩ (typ.) @ VGS=10V
• 100% EAS Guaranteed • Super Low Gate Charge • Exce.
HY3008B - N-Channel Enhancement Mode MOSFET
(HOOYI)
.
