HY4306A Datasheet, Mosfet, HOOYI

HY4306A Features

• Mosfet
• 60V/230A RDS(ON) = 2.2 mΩ (typ.) @ VGS=10V
• 100% avalanche tested
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant) Pin

PDF File Details

Part number:

HY4306A

Manufacturer:

HOOYI

File Size:

3.05MB

Download:

📄 Datasheet

Description:

N-channel mosfet. S D G TO-247-3L S D G TO-3P-3L Applications

Switching application

Power Management for Inverter Systems. D G

HY4306A Application

• Applications
• Switching application
• Power Management for Inverter Systems. D G N-Channel MOSFET Ordering and Marking Informatio

TAGS

HY4306A

HOOYI

📁 Related Datasheet

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HY4306P - N-Channel MOSFET (HOOYI)
HY4306P/B N-Channel Enhancement Mode MOSFET Features • 60V/230A RDS(ON) = 2.6 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.

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HY4008A - N-Channel MOSFET (HOOYI)
HY4008W/A N-Channel Enhancement Mode MOSFET Features • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.

HY4008B - N-Channel MOSFET (HOOYI)
HY4008P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Features • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rug.

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HY4008P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Features • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rug.

HY4008P - N-Channel MOSFET (HOOYI)
HY4008P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Features • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rug.