HY4306P Datasheet, Mosfet, HOOYI

HY4306P Features

• Mosfet
• 60V/230A RDS(ON) = 2.6 mΩ (typ.) @ VGS=10V
• 100% avalanche tested
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant) Pin

PDF File Details

Part number:

HY4306P

Manufacturer:

HOOYI

File Size:

3.78MB

Download:

📄 Datasheet

Description:

N-channel mosfet. DS G TO-220FB-3L DS G TO-263-2L Applications

Switching application

Power Management for Inverter Systems. D G

HY4306P Application

• Applications
• Switching application
• Power Management for Inverter Systems. D G N-Channel MOSFET Ordering and Marking Informatio

TAGS

HY4306P

HOOYI

📁 Related Datasheet

HY4306A - N-Channel MOSFET (HOOYI)
HY4306W/A N-Channel Enhancement Mode MOSFET Features • 60V/230A RDS(ON) = 2.2 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.

HY4306B - N-Channel MOSFET (HOOYI)
HY4306P/B N-Channel Enhancement Mode MOSFET Features • 60V/230A RDS(ON) = 2.6 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.

HY4306W - N-Channel MOSFET (HOOYI)
HY4306W/A N-Channel Enhancement Mode MOSFET Features • 60V/230A RDS(ON) = 2.2 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.

HY4004A - N-Channel MOSFET (HOOYI)
HY4004W/A Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-S.

HY4004W - N-Channel MOSFET (HOOYI)
HY4004W/A Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-S.

HY4008 - N-Channel MOSFET (HOOYI)
HY4008W/A N-Channel Enhancement Mode MOSFET Features • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.

HY4008A - N-Channel MOSFET (HOOYI)
HY4008W/A N-Channel Enhancement Mode MOSFET Features • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.

HY4008B - N-Channel MOSFET (HOOYI)
HY4008P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Features • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rug.

HY4008M - N-Channel MOSFET (HOOYI)
HY4008P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Features • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rug.

HY4008P - N-Channel MOSFET (HOOYI)
HY4008P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Features • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rug.