HY4306W
HOOYI
3.05MB
N-channel mosfet. S D G TO-247-3L S D G TO-3P-3L Applications Switching application Power Management for Inverter Systems. D G
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📁 Related Datasheet
HY4306A - N-Channel MOSFET
(HOOYI)
HY4306W/A
N-Channel Enhancement Mode MOSFET
Features
• 60V/230A
RDS(ON) = 2.2 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Le.
HY4306B - N-Channel MOSFET
(HOOYI)
HY4306P/B
N-Channel Enhancement Mode MOSFET
Features
• 60V/230A
RDS(ON) = 2.6 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Le.
HY4306P - N-Channel MOSFET
(HOOYI)
HY4306P/B
N-Channel Enhancement Mode MOSFET
Features
• 60V/230A
RDS(ON) = 2.6 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Le.
HY4004A - N-Channel MOSFET
(HOOYI)
HY4004W/A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage VGSS Gate-S.
HY4004W - N-Channel MOSFET
(HOOYI)
HY4004W/A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage VGSS Gate-S.
HY4008 - N-Channel MOSFET
(HOOYI)
HY4008W/A
N-Channel Enhancement Mode MOSFET
Features
• 80V/200A
RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Le.
HY4008A - N-Channel MOSFET
(HOOYI)
HY4008W/A
N-Channel Enhancement Mode MOSFET
Features
• 80V/200A
RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Le.
HY4008B - N-Channel MOSFET
(HOOYI)
HY4008P/M/B/PS/PM
N-Channel Enhancement Mode MOSFET
Features
• 80V/200A
RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rug.
HY4008M - N-Channel MOSFET
(HOOYI)
HY4008P/M/B/PS/PM
N-Channel Enhancement Mode MOSFET
Features
• 80V/200A
RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rug.
HY4008P - N-Channel MOSFET
(HOOYI)
HY4008P/M/B/PS/PM
N-Channel Enhancement Mode MOSFET
Features
• 80V/200A
RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rug.