HY4306W Datasheet, Mosfet, HOOYI

HY4306W Features

  • Mosfet
  • 60V/230A RDS(ON) = 2.2 mΩ (typ.) @ VGS=10V
  • 100% avalanche tested
  • Reliable and Rugged
  • Lead Free and Green Devices Available (RoHS Compliant) Pin

PDF File Details

Part number:

HY4306W

Manufacturer:

HOOYI

File Size:

3.05MB

Download:

📄 Datasheet

Description:

N-channel mosfet. S D G TO-247-3L S D G TO-3P-3L Applications Switching application Power Management for Inverter Systems. D G

Datasheet Preview: HY4306W 📥 Download PDF (3.05MB)
Page 2 of HY4306W Page 3 of HY4306W

HY4306W Application

  • Applications
  • Switching application
  • Power Management for Inverter Systems. D G N-Channel MOSFET Ordering and Marking Informatio

TAGS

HY4306W
N-Channel
MOSFET
HOOYI

📁 Related Datasheet

HY4306A - N-Channel MOSFET (HOOYI)
HY4306W/A N-Channel Enhancement Mode MOSFET Features • 60V/230A RDS(ON) = 2.2 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.

HY4306B - N-Channel MOSFET (HOOYI)
HY4306P/B N-Channel Enhancement Mode MOSFET Features • 60V/230A RDS(ON) = 2.6 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.

HY4306P - N-Channel MOSFET (HOOYI)
HY4306P/B N-Channel Enhancement Mode MOSFET Features • 60V/230A RDS(ON) = 2.6 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.

HY4004A - N-Channel MOSFET (HOOYI)
HY4004W/A Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-S.

HY4004W - N-Channel MOSFET (HOOYI)
HY4004W/A Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-S.

HY4008 - N-Channel MOSFET (HOOYI)
HY4008W/A N-Channel Enhancement Mode MOSFET Features • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.

HY4008A - N-Channel MOSFET (HOOYI)
HY4008W/A N-Channel Enhancement Mode MOSFET Features • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.

HY4008B - N-Channel MOSFET (HOOYI)
HY4008P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Features • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rug.

HY4008M - N-Channel MOSFET (HOOYI)
HY4008P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Features • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rug.

HY4008P - N-Channel MOSFET (HOOYI)
HY4008P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Features • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rug.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts