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HPP600R1K0DN Datasheet - HUAJING MICROELECTRONICS

Silicon N-Channel Power MOSFET

HPP600R1K0DN Features

* l Superior switching performance l Low on resistance(Rdson≤1Ω) l Low gate charge (Typical Data:20.2nC) l Low reverse transfer capacitances(Typical:17.8pF) l 100% Single pulse avalanche energy test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specifie

HPP600R1K0DN General Description

HPP600R1K0DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and hi.

HPP600R1K0DN Datasheet (402.17 KB)

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Datasheet Details

Part number:

HPP600R1K0DN

Manufacturer:

HUAJING MICROELECTRONICS

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402.17 KB

Description:

Silicon n-channel power mosfet.

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HPP600R1K0DN Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS

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HPP600R1K0DN Features

HPP600R1K0DN General Description

Datasheet Details

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Description:

HPP600R1K0DN Distributor