HFP7N80
HUASHAN ELECTRONIC
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N-channel enhancement mode field effect transistor. These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this adva
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HFP7N80 - N-Channel MOSFET
(SemiHow)
HFP7N80
June 2005
HFP7N80
800V N-Channel MOSFET
BVDSS = 800 V RDS(on) typ = 1.55 ȍ ID = 7.0 A
FEATURES
Originative New Design Superior Avalanc.
HFP7N60 - N-Channel Enhancement Mode Field Effect Transistor
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Shantou Huashan Electronic Devices Co., Ltd.
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These are N-Channel e.
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Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very .
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Shantou Huashan Electronic Devices Co.,Ltd.
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N-Channel Enhancement Mode Field Effect Transistor
█ Applications
• Portable Equipment. • LCD.
HFP70N06 - N-Channel Enhancement Mode Field Effect Transistor
(HUASHAN ELECTRONIC)
Shantou Huashan Electronic Devices Co.,Ltd.
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N-Channel Enhancement Mode Field Effect Transistor
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HFP730 - N-Channel Enhancement Mode Field Effect Transistor
(Shantou Huashan Electronic)
..
Shantou Huashan Electronic Devices Co.,Ltd.
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█ General Description
the.
HFP730 - 400V N-Channel MOSFET
(SemiHow)
HFP730
June 2005
HFP730
400V N-Channel MOSFET
BVDSS = 400 V RDS(on) typ ȍ ID = 5.5 A
FEATURES
Originative New Design Superior Avalanche .
HFP730F - N-Channel MOSFET
(SemiHow)
HFP730F_HFS730F
Dec 2016
HFP730F / HFS730F
400V N-Channel MOSFET
Features
Originative New Design Very Low Intrinsic Capacitances Excellent Swi.
HFP730S - N-Channel MOSFET
(SemiHow)
HFP730S
Nov 2013
HFP730S
400V N-Channel MOSFET
BVDSS = 400 V RDS(on) typ ȍ ID = 6.0 A
FEATURES
Originative New Design Superior Avalanch.
HFP730U - N-Channel MOSFET
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HFP730U
HFP730U
400V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very .