HFP7N80 Datasheet, Transistor, HUASHAN ELECTRONIC

HFP7N80 Features

  • Transistor
  • 7A, 800V(See Note), RDS(on) <1.6Ω@VGS = 10 V
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • RoHS compliant █ Maximum Ra

PDF File Details

Part number:

HFP7N80

Manufacturer:

HUASHAN ELECTRONIC

File Size:

510.72kb

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📄 Datasheet

Description:

N-channel enhancement mode field effect transistor. These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this adva

Datasheet Preview: HFP7N80 📥 Download PDF (510.72kb)
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TAGS

HFP7N80
N-Channel
Enhancement
Mode
Field
Effect
Transistor
HUASHAN ELECTRONIC

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