HFP13N10 - N-Channel Enhancement Mode Field Effect Transistor
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche
HFP13N10 Features
* 13A, 100V, RDS(on)
