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HFP13N10 Datasheet - HUASHAN ELECTRONIC

HFP13N10 N-Channel Enhancement Mode Field Effect Transistor

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche .

HFP13N10 Features

* 13A, 100V, RDS(on)

HFP13N10-HUASHANELECTRONIC.pdf

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Datasheet Details

Part number:

HFP13N10

Manufacturer:

HUASHAN ELECTRONIC

File Size:

532.07 KB

Description:

N-channel enhancement mode field effect transistor.

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HFP13N10 HFP13N10 N-Channel Enhancement Mode Field Effect Transistor HUASHAN ELECTRONIC

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