HFP10N60U - N-Channel MOSFET

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SemiHow

Part number	HFP10N60U
Manufacturer	SemiHow
File Size	202.18 KB
Description	N-Channel MOSFET
Datasheet	HFP10N60U Datasheet
Additional preview pages of the HFP10N60U datasheet.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.67 ȍ7S#9GS=10V 100% Avalanche Tested Feb 2013 BVDSS = 600 V RDS(on) typ = 0.67 ȍ ID = 9.5 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS E.

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Published: Apr 18, 2016 |