HFP11N40 - N-Channel MOSFET
HFP11N40 Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.38 Ω (Typ.) @VGS=10V Dec 2005 BVDSS = 400
