HFP13N50 Datasheet, Transistor, HUASHAN ELECTRONIC

HFP13N50 Features

• Transistor
• 13A, 500V(See Note), RDS(on) <0.48Ω@VGS = 10 V
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Equivalent Type:FQP13N50C

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Part number:

HFP13N50

Manufacturer:

HUASHAN ELECTRONIC

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496.91kb

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📄 Datasheet

Description:

N-channel enhancement mode field effect transistor. These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this adva

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HFP13N50

HUASHAN ELECTRONIC

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