HFP10N60 - N-Channel MOSFET

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SemiHow

Part number	HFP10N60
Manufacturer	SemiHow
File Size	506.02 KB
Description	N-Channel MOSFET
Datasheet	HFP10N60 Datasheet
Additional preview pages of the HFP10N60 datasheet.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.64 Ω (Typ. ) @VGS=10V Nov 2005 BVDSS = 600 V RDS(on) typ = 0.64 Ω ID = 9.5 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drai.

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Published: Jun 7, 2015 |