HFP10N60S - N-Channel MOSFET

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SemiHow

Part number	HFP10N60S
Manufacturer	SemiHow
File Size	834.08 KB
Description	N-Channel MOSFET
Datasheet	HFP10N60S Datasheet
Additional preview pages of the HFP10N60S datasheet.

q Originative New Design q Superior Avalanche Rugged Technology q Robust Gate Oxide Technology q Very Low Intrinsic Capacitances q Excellent Switching Characteristics q Unrivalled Gate Charge : 29 nC (Typ. ) q Extended Safe Operating Area q Lower RDS(ON) : 0.67 Ω (Typ. ) @VGS=10V q 100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

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Published: Jun 7, 2015 |