HFP4N65 - N-Channel Enhancement Mode Field Effect Transistor
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche
HFP4N65 Features
* 4A, 650V(See Note), RDS(on)
