HFP4N65

N-Channel Enhancement Mode Field Effect Transistor

HUASHAN ELECTRONIC

HFP4N65 Features

* 4A, 650V(See Note), RDS(on)

HFP4N65 General Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche .

HFP4N65 Datasheet (814.75 KB)

HFP4N65 Datasheet Preview — Preview of HFP4N65 PDF

Datasheet Details

Part number:

HFP4N65

Manufacturer:

HUASHAN ELECTRONIC

File Size:

814.75 KB

Description:

N-channel enhancement mode field effect transistor.

📁 Related Datasheet

HFP4N60 N-Channel MOSFET (SemiHow)

HFP4N60F 600V N-Channel MOSFET (SemiHow)

HFP4N65 N-Channel MOSFET (SemiHow)

HFP4N50 N-Channel MOSFET (SemiHow)

HFP4N90 N-Channel MOSFET (SemiHow)

HFP10N60 N-Channel MOSFET (SemiHow)

HFP10N60S N-Channel MOSFET (SemiHow)

HFP10N60U N-Channel MOSFET (SemiHow)

HFP10N65S N-Channel MOSFET (SemiHow)

HFP10N65U N-Channel MOSFET (SemiHow)

TAGS

HFP4N65 N-Channel Enhancement Mode Field Effect Transistor HUASHAN ELECTRONIC

Image Gallery

HFP4N65 Features

HFP4N65 General Description

Datasheet Details

File Size:

Description:

HFP4N65 Distributor