HFP4N60F - 600V N-Channel MOSFET
HFP4N60F Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 8.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.6 ȍ 7S #9GS=10V 100% Avalanche Teste
