HFP5N80

N-Channel Enhancement Mode Field Effect Transistor

HUASHAN ELECTRONIC

HFP5N80 Features

* 4.8A, 800V(See Note), RDS(on)

HFP5N80 General Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche .

HFP5N80 Datasheet (656.27 KB)

HFP5N80 Datasheet Preview — Preview of HFP5N80 PDF

Datasheet Details

Part number:

HFP5N80

Manufacturer:

HUASHAN ELECTRONIC

File Size:

656.27 KB

Description:

N-channel enhancement mode field effect transistor.

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HFP5N80 N-Channel Enhancement Mode Field Effect Transistor HUASHAN ELECTRONIC

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HFP5N80 Features

HFP5N80 General Description

Datasheet Details

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Description:

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