HFP5N80 Datasheet, Transistor, HUASHAN ELECTRONIC

HFP5N80 Features

• Transistor
• 4.8A, 800V(See Note), RDS(on) <2.6Ω@VGS = 10 V
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Equivalent Type:FQP5N80 █

PDF File Details

Part number:

HFP5N80

Manufacturer:

HUASHAN ELECTRONIC

File Size:

656.27kb

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📄 Datasheet

Description:

N-channel enhancement mode field effect transistor. These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this adva

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HFP5N80

HUASHAN ELECTRONIC

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