HFP17N10 Datasheet, Transistor, HUASHAN ELECTRONIC

HFP17N10 Features

• Transistor
• 17A, 100V, RDS(on) <70mΩ@VGS = 10 V
• High density cell design for ultra low Rdson
• Fast switching
• 100% avalanche tested
• Improved dv/dt ca

PDF File Details

Part number:

HFP17N10

Manufacturer:

HUASHAN ELECTRONIC

File Size:

1.15MB

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📄 Datasheet

Description:

N-channel enhancement mode field effect transistor. These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this adva

HFP17N10 Application

• Applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. █ Features
• 17A, 100V, RDS(on) <70m

TAGS

HFP17N10

HUASHAN ELECTRONIC

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