HFP13N65U - N-Channel MOSFET

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SemiHow

Part number	HFP13N65U
Manufacturer	SemiHow
File Size	195.49 KB
Description	N-Channel MOSFET
Datasheet	HFP13N65U Datasheet
Additional preview pages of the HFP13N65U datasheet.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 60.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : ȍ(Typ. ) @VGS=10V 100% Avalanche Tested March 2013 BVDSS = 650 V RDS(on) typ = 0.4 ȍ ID = 14.0 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM V.

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Published: Apr 18, 2016 |