IRF511, IRF510 Datasheet - Harris Corporation

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IRF511, IRF510 (IRF510 - IRF513) N-Channel Power MOSFETs

www.DataSheet4U.com Semiconductor IRF510, IRF511, IRF512, IRF513 4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs Descriptio.
These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors.

IRF510_HarrisCorporation.pdf

IRF511 Datasheet Preview — This datasheet PDF includes multiple part numbers: IRF511, IRF510. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IRF511, IRF510

Manufacturer:

Harris Corporation

File Size:

Direct Link

Description:

(IRF510 - IRF513) N-Channel Power MOSFETs

Note:

This datasheet PDF includes multiple part numbers: IRF511, IRF510.
Please refer to the document for exact specifications by model.

Features

* 4.9A, and 5.6A, 80V and 100V
* rDS(ON) = 0.54Ω and 0.74Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literat

Applications

* such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17441. January 1998

IRF511 Distributors

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