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IRF512

(IRF510 - IRF513) N-Channel Power MOSFETs

IRF512 Features

* 4.9A, and 5.6A, 80V and 100V

* rDS(ON) = 0.54Ω and 0.74Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literat

IRF512 General Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi.

IRF512 Datasheet (Direct Link)

Preview of IRF512 PDF

Datasheet Details

Part number:

IRF512

Manufacturer:

Harris Corporation

File Size:

Direct Link

Description:

(irf510 - irf513) n-channel power mosfets.
www.DataSheet4U.com Semiconductor IRF510, IRF511, IRF512, IRF513 4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs Descriptio.

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IRF512 IRF510 IRF513 N-Channel Power MOSFETs Harris Corporation

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