H9926CS Datasheet - Hi-Sincerity Mocroelectronics

Dual N-Channel Enhancement-Mode MOSFET

H9926CS Features

* RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A

* High Density Cell Design for Ultra Low On-Resistance

* High Power and Current Handing Capability

* Fully Characterized Avalanche Voltage and Current

* Ideal for Li ion Battery Pack Applications

H9926CS General Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a www.DataSheet4U.com wide range of gate drive voltage (2.5V-10V) H9926S Symbol & Pin Assignment 5 6 7 8 Q2 Q1 4 3 2 1 Pin 1: Source 2 Pin 2: Gate .

H9926CS Datasheet (77.48 KB)

H9926CS Datasheet Preview — Preview of H9926CS PDF

Datasheet Details

Part number:

H9926CS

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

77.48 KB

Description:

Dual n-channel enhancement-mode mosfet.
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200508 Issued Date : 2005.08.01 Revised Date : 2005.10.06 Page No. : 1/4 H9926S / H9926CS Dual N-.

📁 Related Datasheet

H9926CTS Dual N-Channel Enhancement-Mode MOSFET (Hi-Sincerity Mocroelectronics)

H9926S Dual N-Channel Enhancement-Mode MOSFET (Hi-Sincerity Mocroelectronics)

H9926TS Dual N-Channel Enhancement-Mode MOSFET (Hi-Sincerity Mocroelectronics)

H9001-01 TERMINAL LUG (HARWIN)

H9004-01 TERMINAL LUG (HARWIN)

H9012 PNP Silicon Transistor (Shantou Huashan)

H9013 NPN Silicon Transistor (Shantou Huashan Electronic)

H9014 NPN EPITAXIAL SILICON TRANSISTOR (ETC)

H9014 NPN Silicon Transistor (Shantou Huashan)

H9018 NPN Silicon Transistor (Shantou Huashan)

TAGS

H9926CS Dual N-Channel Enhancement-Mode MOSFET Hi-Sincerity Mocroelectronics

Image Gallery

H9926CS Features

H9926CS General Description

Datasheet Details

File Size:

Description:

H9926CS Distributor