H9926CS - Dual N-Channel Enhancement-Mode MOSFET
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process.
It has been optimized for power management applications with a www.DataSheet4U.com wide range of gate drive voltage (2.5V-10V) H9926S Symbol & Pin Assignment 5 6 7 8 Q2 Q1 4 3 2 1 Pin 1: Source 2 Pin 2: Gate
H9926CS Features
* RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A
* High Density Cell Design for Ultra Low On-Resistance
* High Power and Current Handing Capability
* Fully Characterized Avalanche Voltage and Current
* Ideal for Li ion Battery Pack Applications
