H9926CTS, H9926CTS_Hi Datasheet - Hi-Sincerity Mocroelectronics

H9926CTS Dual N-Channel Enhancement-Mode MOSFET

This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a www.DataSheet4U.com wide range of gate drive voltage (2.5V-10V) Q2 Q1 1 2 3 4 Pin 1: Drain 1 Pin 2 / 3: Source 1 Pin 4: Gate 1 Pin 5: Gate 2 .

H9926CTS Features

* RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A

* High Density Cell Design for Ultra Low On-Resistance

* High Power and Current Handing Capability

* Fully Characterized Avalanche Voltage and Current

* Ideal for Li ion Battery Pack Applications

H9926CTS_Hi-SincerityMocroelectronics.pdf

H9926CTS Datasheet Preview — This datasheet PDF includes multiple part numbers: H9926CTS, H9926CTS_Hi. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

H9926CTS, H9926CTS_Hi

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

76.61 KB

Description:

Dual n-channel enhancement-mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: H9926CTS, H9926CTS_Hi.
Please refer to the document for exact specifications by model.

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H9926CTS H9926CTS_Hi Dual N-Channel Enhancement-Mode MOSFET Hi-Sincerity Mocroelectronics

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