H9926S Datasheet, Mosfet, Hi-Sincerity Mocroelectronics

H9926S Features

• Mosfet
• RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A
• High Density Cell Design for Ultra Low On-Resistance
• High Power and Current Handing Capability

PDF File Details

Part number:

H9926S

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

77.48kb

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📄 Datasheet

Description:

Dual n-channel enhancement-mode mosfet. This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management

H9926S Application

• Applications with a www.DataSheet4U.com wide range of gate drive voltage (2.5V-10V) H9926S Symbol & Pin Assignment 5 6 7 8 Q2 Q1 4 3 2 1 Pin 1: So

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H9926S

Hi-Sincerity Mocroelectronics

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