H9926S Datasheet - Hi-Sincerity Mocroelectronics

Dual N-Channel Enhancement-Mode MOSFET

H9926S Features

* RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A

* High Density Cell Design for Ultra Low On-Resistance

* High Power and Current Handing Capability

* Fully Characterized Avalanche Voltage and Current

* Ideal for Li ion Battery Pack Applications

H9926S General Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a www.DataSheet4U.com wide range of gate drive voltage (2.5V-10V) H9926S Symbol & Pin Assignment 5 6 7 8 Q2 Q1 4 3 2 1 Pin 1: Source 2 Pin 2: Gate .

H9926S Datasheet (77.48 KB)

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Part number:

H9926S

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

77.48 KB

Description:

Dual n-channel enhancement-mode mosfet.
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200508 Issued Date : 2005.08.01 Revised Date : 2005.10.06 Page No. : 1/4 H9926S / H9926CS Dual N-.

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H9926S Dual N-Channel Enhancement-Mode MOSFET Hi-Sincerity Mocroelectronics

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H9926S Features

H9926S General Description

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