HI1109 Datasheet - Hi-Sincerity Mocroelectronics

PNP EPITAXIAL PLANAR TRANSISTOR

HI1109 General Description

* Low frequency high voltage amplifier * Complementary pair with HI1609 Absolute Maximum Ratings (Ta=25°C) * Maximum Temperatures Storage Temperature -55~+150 °C Junction Temperature +150 °C * Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 1.25 W .

HI1109 Datasheet (59.04 KB)

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Part number:

HI1109

Manufacturer:

Hi-Sincerity Mocroelectronics

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59.04 KB

Description:

Pnp epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9019-B Issued Date : 1996.04.15 Revised Date : 2000.11.01 Page No. : 1/3 HI1109 PNP EPITAXIAL PLAN.

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HI1109 General Description

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