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HI1109, HI1109_Hi PNP EPITAXIAL PLANAR TRANSISTOR

HI1109 Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE9019-B Issued Date : 1996.04.15 Revised Date : 2000.11.01 Page No.: 1/3 HI1109 PNP EPITAXIAL PLAN.
Low frequency high voltage amplifier. Complementary pair with HI1609 Absolute Maximum Ratings (Ta=25°C). Maximum Temperat.

HI1109 Applications

* or systems.
* HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory :
* Head Office (Hi-Sincerity Microelectronics Corp. ) : 10F. ,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R. O. C. Te

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This datasheet PDF includes multiple part numbers: HI1109, HI1109_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HI1109, HI1109_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
59.04 KB
Datasheet
HI1109_Hi-SincerityMocroelectronics.pdf
Description
PNP EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HI1109, HI1109_Hi.
Please refer to the document for exact specifications by model.

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PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HI1109-like datasheet