| Part number | HI112, HI112_Hi |
|---|---|
| Manufacturer | Hi-Sincerity Mocroelectronics |
| File Size | 70.50 KB |
| Description | NPN EPITAXIAL PLANAR TRANSISTOR |
| Datasheet |
 HI112_Hi-SincerityMocroelectronics.pdf
|
| Note |
This datasheet PDF includes multiple part numbers: HI112, HI112_Hi. Please refer to the document for exact specifications by model. |
The HI112 is designed for use in general purpose amplifier and lowspeed switching applications. Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 25 W Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage 100 V VCEO Collector to Emitter Voltage 100 V VEBO Emitter to Base Voltage 5 V IC Collector Curr
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