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HI117, HI117_Hi PNP EPITAXIAL PLANAR TRANSISTOR

HI117 Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE9031 Issued Date : 1998.07.01 Revised Date : 2001.09.14 Page No.: 1/4 HI117 PNP EPITAXIAL PLANAR .
The HI117 is designed for use in general purpose amplifier and low-speed switching applications. Maximum.

HI117 Applications

* Absolute Maximum Ratings (Ta=25°C)
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 25 W
* Maximum Voltages and Currents BVCBO Collector to Base Voltage -100 V BVC

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This datasheet PDF includes multiple part numbers: HI117, HI117_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HI117, HI117_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
66.62 KB
Datasheet
HI117_Hi-SincerityMocroelectronics.pdf
Description
PNP EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HI117, HI117_Hi.
Please refer to the document for exact specifications by model.

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PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HI117-like datasheet