| Part number | HI117, HI117_Hi |
|---|---|
| Manufacturer | Hi-Sincerity Mocroelectronics |
| File Size | 66.62 KB |
| Description | PNP EPITAXIAL PLANAR TRANSISTOR |
| Datasheet |
 HI117_Hi-SincerityMocroelectronics.pdf
|
| Note |
This datasheet PDF includes multiple part numbers: HI117, HI117_Hi. Please refer to the document for exact specifications by model. |
The HI117 is designed for use in general purpose amplifier and low-speed switching applications. Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 25 W Maximum Voltages and Currents BVCBO Collector to Base Voltage -100 V BVCEO Collector to Emitter Voltage -100 V BVEBO Emitter to Base Voltage -5 V IC Collector Current (Continu
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