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HI649A Datasheet - Hi-Sincerity Mocroelectronics

HI649A PNP Transistor

The HI649A is designed for low frequency power amplifier. Absolute Maximum Ratings (Ta=25°C) TO-251 * Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C * Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 20 W * Maximum Voltage.

HI649A Datasheet (192.82 KB)

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Datasheet Details

Part number:

HI649A

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

192.82 KB

Description:

Pnp transistor.

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HI649A PNP Transistor Hi-Sincerity Mocroelectronics

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