HI669A

NPN Transistor

Hi-Sincerity Mocroelectronics

HI669A General Description

The HI669A is designed for low frequency power amplifier. Absolute Maximum Ratings (Ta=25°C) TO-251

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C

* Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 1 W

* Maximum Voltages.

HI669A Datasheet (191.95 KB)

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Datasheet Details

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HI669A

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Hi-Sincerity Mocroelectronics

File Size:

191.95 KB

Description:

Npn transistor.
www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9004 Issued Date : 1998.01.25 Revised Date : 2002.09.16 Page No. : 1/3 HI669A.

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HI669A NPN Transistor Hi-Sincerity Mocroelectronics

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HI669A General Description

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