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HI6718, HI6718_Hi NPN Transistor

HI6718 Description

www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE9008-A Issued Date : 1998.04.10 Revised Date : 2000.11.01 Page No.: 1/2 HI67.
The HI6718 is designed for general purpose medium power amplifier and switching. High power: 1. High current: 1A Abso.

HI6718 Features

* High power: 1.2W
* High current: 1A Absolute Maximum Ratings (Ta=25°C)
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C
* Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 20 W
* Maximum Voltages and Curren

HI6718 Applications

* or systems.
* HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory :
* Head Office (Hi-Sincerity Microelectronics Corp. ) : 10F. ,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R. O. C. Te

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This datasheet PDF includes multiple part numbers: HI6718, HI6718_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HI6718, HI6718_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
181.59 KB
Datasheet
HI6718_Hi-SincerityMocroelectronics.pdf
Description
NPN Transistor
Note
This datasheet PDF includes multiple part numbers: HI6718, HI6718_Hi.
Please refer to the document for exact specifications by model.

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NPN Transistor Hi-Sincerity Mocroelectronics
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