HJ210, HJ210_Hi PNP EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE6011-B Issued Date : 1996.03.12 Revised Date : 2000.11.01 Page No.: 1/2 HJ210 PNP EPITAXIAL PLANA.
The HJ210 is designed for low voltage, low-power, high-gain audio amplifier applications. Maximum Temper.

📥 Download Datasheet

HJ210 Datasheet Preview — This datasheet PDF includes multiple part numbers: HJ210, HJ210_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: HJ210, HJ210_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 23.32 KB
Datasheet: HJ210_Hi-SincerityMocroelectronics.pdf
Description: PNP EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: HJ210, HJ210_Hi.
Please refer to the document for exact specifications by model.

Applications

* Absolute Maximum Ratings (Ta=25°C)
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C
* Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 12.5 W
* Maximum Voltages and Currents BVCBO Collector to Base Voltage -40 V BVCEO Coll

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