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HJ210 Datasheet - Hi-Sincerity Mocroelectronics

PNP EPITAXIAL PLANAR TRANSISTOR

HJ210 General Description

The HJ210 is designed for low voltage, low-power, high-gain audio amplifier applications. Absolute Maximum Ratings (Ta=25°C) * Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C * Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 12.5 W .

HJ210 Datasheet (23.32 KB)

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Datasheet Details

Part number:

HJ210

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

23.32 KB

Description:

Pnp epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6011-B Issued Date : 1996.03.12 Revised Date : 2000.11.01 Page No. : 1/2 HJ210 PNP EPITAXIAL PLANA.

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HJ210 PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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