The HJ210 by Hi-Sincerity Mocroelectronics is a PNP EPITAXIAL PLANAR TRANSISTOR. Below is the official datasheet preview.
| Part number | HJ210, HJ210_Hi |
|---|---|
| Manufacturer | Hi-Sincerity Mocroelectronics |
| File Size | 23.32 KB |
| Description | PNP EPITAXIAL PLANAR TRANSISTOR |
| Datasheet |
 HJ210_Hi-SincerityMocroelectronics.pdf
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| Note |
This datasheet PDF includes multiple part numbers: HJ210, HJ210_Hi. Please refer to the document for exact specifications by model. |
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The HJ210 is designed for low voltage, low-power, high-gain audio amplifier applications. Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 12.5 W Maximum Voltages and Currents BVCBO Collector to Base Voltage -40 V BVCEO Collector to Emitter Voltage
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