Datasheet4U Logo Datasheet4U.com

HJ2955, HJ2955_Hi PNP EPITAXIAL PLANAR TRANSISTOR

HJ2955 Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE6003 Issued Date : 1994.10.04 Revised Date : 2002.04.03 Page No.: 1/4 HJ2955 PNP EPITAXIAL PLANAR.
The HJ2955 is designed for general purpose of amplifier and switching applications. Maximum Tem.

HJ2955 Applications

* Absolute Maximum Ratings (Ta=25°C) TO-252
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 20 W
* Maximum Voltages and Currents BVCBO Collector to Base Voltage -70

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HJ2955, HJ2955_Hi. Please refer to the document for exact specifications by model.
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
HJ2955, HJ2955_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
37.17 KB
Datasheet
HJ2955_Hi-SincerityMocroelectronics.pdf
Description
PNP EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HJ2955, HJ2955_Hi.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

  • HJ251A - NPN Transistor (Hangjing)

📌 All Tags

PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HJ2955-like datasheet