HJ2584
Hi-Sincerity Mocroelectronics
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Pnp epitaxial planar transistor.
HI-SINCERITY
MICROELECTRONICS CORP.
HJ2584
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HJ200204 Iss.
The HJ2584 is designed for use in low voltage and low drop out regulator applications.
Absolute Ma.
📁 Related Datasheet
P141NF55 - NPN Transistor
(Hangjing)
STB141NF55 - STB141NF55-1 STP141NF55
N-channel 55V - 0.0065Ω - 80A - D2PAK - I2PAK - TO-220 STripFET™ II Power MOSFET
Features
Type STB141NF55 STB141N.
HJ210 - PNP EPITAXIAL PLANAR TRANSISTOR
(Hi-Sincerity Mocroelectronics)
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6011-B Issued Date : 1996.03.12 Revised Date : 2000.11.01 Page No. : 1/2
HJ210
PNP EPITAXIAL PLANA.
HJ2955 - PNP EPITAXIAL PLANAR TRANSISTOR
(Hi-Sincerity Mocroelectronics)
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6003 Issued Date : 1994.10.04 Revised Date : 2002.04.03 Page No. : 1/4
HJ2955
PNP EPITAXIAL PLANAR.
HJ-12002 - (HJ-12002 / HJ-12003) Power Divider
(Signal)
HJ-12002 / 12003
0.01 to 10 MHz Two-Way 0˚ Power Dividers
ISOLATION vs. FREQUENCY
30 0.0
INSERTION LOSS vs. FREQUENCY
INSERTION LOSS (dB)
18
RETURN .
HJ-12003 - (HJ-12002 / HJ-12003) Power Divider
(Signal)
HJ-12002 / 12003
0.01 to 10 MHz Two-Way 0˚ Power Dividers
ISOLATION vs. FREQUENCY
30 0.0
INSERTION LOSS vs. FREQUENCY
INSERTION LOSS (dB)
18
RETURN .
HJ-531IMF - ultra-lowpower Bluetooth
(HongJia)
HJ-531IMF
HJ-531IMF Ultra-small Chip (5mmx4.75mm,including ANT,1Mb Flash) ultra-low power Bluetooth 5.1 module Datasheet Data Sheet
DataSheet version:.
