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HJ649A

PNP EPITAXIAL PLANAR TRANSISTOR

HJ649A General Description

The HJ649A is designed for low frequency power amplifier. Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2002.04.03 Page No. : 1/3 Absolute Maximum Ratings (Ta=25°C) TO-252

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C

* Maxim.

HJ649A Datasheet (27.71 KB)

Preview of HJ649A PDF

Datasheet Details

Part number:

HJ649A

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

27.71 KB

Description:

Pnp epitaxial planar transistor.

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HJ649A PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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