The HJ649A by Hi-Sincerity Mocroelectronics is a PNP EPITAXIAL PLANAR TRANSISTOR. Below is the official datasheet preview.
| Part number | HJ649A, HJ649A_Hi |
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| Manufacturer | Hi-Sincerity Mocroelectronics |
| File Size | 27.71 KB |
| Description | PNP EPITAXIAL PLANAR TRANSISTOR |
| Datasheet |
 HJ649A_Hi-SincerityMocroelectronics.pdf
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| Note |
This datasheet PDF includes multiple part numbers: HJ649A, HJ649A_Hi. Please refer to the document for exact specifications by model. |
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The HJ649A is designed for low frequency power amplifier. Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 20 W Maximum Voltages and Currents BVCBO Collector to Base Voltage -180 V BVCEO Collector to Emitter Voltage -160 V BVE
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