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HJ669A Datasheet - Hi-Sincerity Mocroelectronics

HJ669A NPN EPITAXIAL PLANAR TRANSISTOR

The HJ669A is designed for low frequency power amplifier. Absolute Maximum Ratings (TA=25°C) TO-252 * Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C * Maximum Power Dissipation Total Power Dissipation (TC=25°C) 1 W * Maximum Voltag.

HJ669A Datasheet (76.24 KB)

Preview of HJ669A PDF

Datasheet Details

Part number:

HJ669A

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

76.24 KB

Description:

Npn epitaxial planar transistor.

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HJ669A NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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