HJ669A, HJ669A_Hi Datasheet - Hi-Sincerity Mocroelectronics

HJ669A - NPN EPITAXIAL PLANAR TRANSISTOR

The HJ669A is designed for low frequency power amplifier.

Absolute Maximum Ratings (TA=25°C) TO-252 * Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C * Maximum Power Dissipation Total Power Dissipation (TC=25°C) 1 W * Maximum Voltag

HJ669A_Hi-SincerityMocroelectronics.pdf

HJ669A Datasheet Preview — This datasheet PDF includes multiple part numbers: HJ669A, HJ669A_Hi. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

HJ669A, HJ669A_Hi

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

76.24 KB

Description:

Npn epitaxial planar transistor.

Note:

This datasheet PDF includes multiple part numbers: HJ669A, HJ669A_Hi.
Please refer to the document for exact specifications by model.

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📌 All Tags

HJ669A_Hi NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics