HJ669A - NPN EPITAXIAL PLANAR TRANSISTOR
The HJ669A is designed for low frequency power amplifier.
Absolute Maximum Ratings (TA=25°C) TO-252 * Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C * Maximum Power Dissipation Total Power Dissipation (TC=25°C) 1 W * Maximum Voltag