Datasheet4U Logo Datasheet4U.com

HJ669A, HJ669A_Hi Datasheet - Hi-Sincerity Mocroelectronics

HJ669A NPN EPITAXIAL PLANAR TRANSISTOR

The HJ669A is designed for low frequency power amplifier. Absolute Maximum Ratings (TA=25°C) TO-252 * Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C * Maximum Power Dissipation Total Power Dissipation (TC=25°C) 1 W * Maximum Voltag.

HJ669A_Hi-SincerityMocroelectronics.pdf

This datasheet PDF includes multiple part numbers: HJ669A, HJ669A_Hi. Please refer to the document for exact specifications by model.
HJ669A Datasheet Preview Page 2 HJ669A Datasheet Preview Page 3

Datasheet Details

Part number:

HJ669A, HJ669A_Hi

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

76.24 KB

Description:

Npn epitaxial planar transistor.

Note:

This datasheet PDF includes multiple part numbers: HJ669A, HJ669A_Hi.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

HJ6668 PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

HJ667A PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

HJ622A PNP TRANSISTOR ARRAY (Shaanxi Hangjing)

HJ649A PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

HJ6718 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

HJ-12002 (HJ-12002 / HJ-12003) Power Divider (Signal)

HJ-12003 (HJ-12002 / HJ-12003) Power Divider (Signal)

HJ-531IMF ultra-lowpower Bluetooth (HongJia)

TAGS

HJ669A HJ669A_Hi NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

HJ669A Distributor