HJ669A

NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

HJ669A General Description

The HJ669A is designed for low frequency power amplifier. Absolute Maximum Ratings (TA=25°C) TO-252

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C

* Maximum Power Dissipation Total Power Dissipation (TC=25°C) 1 W

* Maximum Voltag.

HJ669A Datasheet (76.24 KB)

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HJ669A

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Hi-Sincerity Mocroelectronics

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Description:

Npn epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. HJ669A NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2008.04.09 Page.

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HJ669A NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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HJ669A General Description

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